Phase-driven magneto-electrical characteristics of single-layer MoS2. Issue 10 (19th February 2016)

• Record Type: Journal Article
• Authors: Yang, Chao-Yao; Chiu, Kuan-Chang; Chang, Shu-Jui; Zhang, Xin-Quan; Liang, Jaw-Yeu; Chung, Chi-Sheng; Pan, Hui; Wu, Jenn-Ming; Tseng, Yuan-Chieh; Lee, Yi-Hsien
• Is Part Of: Nanoscale. Volume 8:Issue 10(2016)
• Page Start: 5627
• Page End: 5633
• Publication Date: 2016-02-19
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c5nr08850j
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : An evolution of phase-driven magneto-electrical properties of MoS2 device is demonstrated. Abstract : Magnetism of the MoS2 semiconducting atomic layer was highlighted for its great potential in the applications of spintronics and valleytronics. In this study, we demonstrate an evolution of magneto-electrical properties of single layer MoS2 with the modulation of defect configurations and formation of a partial 1T phase. With Ar treatment, sulfur was depleted within the MoS2 flake leading to a 2H (low-spin) → partial 1T (high-spin) phase transition. The phase transition was accompanied by the development of a ferromagnetic phase. Alternatively, the phase transition could be driven by the desorption of S atoms at the edge of MoS2 via O2 treatment while with a different ordering magnitude in magnetism. The edge-sensitive magnetism of the single-layer MoS2 was monitored by magnetic force microscopy and validated by a first-principle calculation with graded-Vs (sulfur vacancy) terminals set at the edge, where band-splitting appeared more prominent with increasing Vs. Treatment with Ar and O2 enabled a dual electrical characteristic of the field effect transistor (FET) that featured linear and saturated responses of different magnitudes in the I ds – V ds curves, whereas the pristine MoS2 FET displayed only a linear electrical dependency. The correlation and tuning of the Vs–1T phase transition would provide a playground for tailoring the phase-driven properties of MoS2 semiconducting atomic layers in spintronic applications.