Non‐Lithographic Fabrication of All‐2D α‐MoTe2 Dual Gate Transistors. (16th March 2016)
- Record Type:
- Journal Article
- Title:
- Non‐Lithographic Fabrication of All‐2D α‐MoTe2 Dual Gate Transistors. (16th March 2016)
- Main Title:
- Non‐Lithographic Fabrication of All‐2D α‐MoTe2 Dual Gate Transistors
- Authors:
- Choi, Kyunghee
Lee, Young Tack
Kim, Jin Sung
Min, Sung‐Wook
Cho, Youngsuk
Pezeshki, Atiye
Hwang, Do Kyung
Im, Seongil - Abstract:
- Abstract : As one of the emerging new transition‐metal dichalcogenides materials, molybdenum ditelluride (α‐MoTe2 ) is attracting much attention due to its optical and electrical properties. This study fabricates all‐2D MoTe2 ‐based field effect transistors (FETs) on glass, using thin hexagonal boron nitride and thin graphene in consideration of good dielectric/channel interface and source/drain contacts, respectively. Distinguished from previous works, in this study, all 2D FETs with α‐MoTe2 nanoflakes are dual‐gated for driving higher current. Moreover, for the present 2D dual gate FET fabrications on glass, all thermal annealing and lithography processes are intentionally exempted for fully non‐lithographic method using only van der Waal's forces. The dual‐gate MoTe2 FET displays quite a high hole and electron mobility over ≈20 cm 2 V −1 s −1 along with ON/OFF ratio of ≈10 5 in maximum as an ambipolar FET and also demonstrates high drain current of a few tens‐to‐hundred μA at a low operation voltage. It appears promising enough to drive organic light emitting diode pixels and NOR logic functions on glass. Abstract : All‐2D MoTe2 ‐based dual gate field‐effect trasnsistors (FETs) are fabricated on glass, using hexagonal boron nitride and graphene without thermal annealing and lithography processes. The dual‐gate MoTe2 FET drives a few tens‐to‐hundred μA at a low operation voltage. It nicely demonstrates its capability of OLED pixel switching and NOR logic operation.
- Is Part Of:
- Advanced functional materials. Volume 26:Number 18(2016)
- Journal:
- Advanced functional materials
- Issue:
- Volume 26:Number 18(2016)
- Issue Display:
- Volume 26, Issue 18 (2016)
- Year:
- 2016
- Volume:
- 26
- Issue:
- 18
- Issue Sort Value:
- 2016-0026-0018-0000
- Page Start:
- 3146
- Page End:
- 3153
- Publication Date:
- 2016-03-16
- Subjects:
- dual‐gate field effect transistor -- graphene -- h‐BN -- α‐MoTe2 -- non‐lithographic
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1616-3028 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adfm.201505346 ↗
- Languages:
- English
- ISSNs:
- 1616-301X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.853900
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 237.xml