High resolution scanning near field mapping of enhancement on SERS substrates: comparison with photoemission electron microscopy. Issue 14 (16th March 2016)

• Record Type: Journal Article
• Authors: Awada, C.; Plathier, J.; Dab, C.; Charra, F.; Douillard, L.; Ruediger, A.
• Is Part Of: Physical chemistry chemical physics. Volume 18:Issue 14(2016)
• Page Start: 9405
• Page End: 9411
• Publication Date: 2016-03-16
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/c5cp08015k
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : The need for a dedicated spectroscopic technique with nanoscale resolution to characterize SERS substrates pushed us to develop a proof of concept of a functionalized tip–surface enhanced Raman scattering (FTERS) technique. Abstract : The need for a dedicated spectroscopic technique with nanoscale resolution to characterize SERS substrates pushed us to develop a proof of concept of a functionalized tip–surface enhanced Raman scattering (FTERS) technique. We have been able to map hot spots on semi-continuous gold films; in order to validate our approach we compare our results with photoemission electron microscopy (PEEM) data, the complementary electron microscopy tool to map hot spots on random metallic surfaces. Enhanced Raman intensity maps at high spatial resolution reveal the localisation of hotspots at gaps for many neighboring nanostructures. Finally, we compare our findings with theoretical simulations of the enhancement factor distribution, which confirms a dimer effect as the dominant origin of hot spots.