Cite
HARVARD Citation
Lin, Y. et al. (2016). High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer. CrystEngComm. 18 (14), pp. 2446-2454. [Online].
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Lin, Y. et al. (2016). High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer. CrystEngComm. 18 (14), pp. 2446-2454. [Online].