P‐Type MoS2 and n‐Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect. Issue 17 (3rd March 2016)

• Record Type: Journal Article
• Authors: Xue, Fei; Chen, Libo; Chen, Jian; Liu, Jingbin; Wang, Longfei; Chen, Mengxiao; Pang, Yaokun; Yang, Xiaonian; Gao, Guoyun; Zhai, Junyi; Wang, Zhong Lin
• Is Part Of: Advanced materials. Volume 28:Issue 17(2016)
• Page Start: 3391
• Page End: 3398
• Publication Date: 2016-03-03
• Subjects: diodes -- n‐type ZnO -- photoresponse -- piezophototronic effect -- p‐type MoS2; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201506472
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : A plasma‐induced p‐type MoS2 flake and n‐type ZnO film diode, which exhibits an excellent rectification ratio, is demonstrated. Under 365 nm optical irradiation, this p–n diode shows a strong photoresponse with an external quantum efficiency of 52.7% and a response time of 66 ms. By increasing the pressure on the junction to 23 MPa, the photocurrent can be enhanced by a factor of four through the piezophototronic effect.