Scalable modeling with simple topology for stacked millimeter‐wave transformers. (20th August 2015)

• Record Type: Journal Article
• Authors: Lu, Diqun; Zhang, Wenjuan; Lin, Fujiang
• Is Part Of: International journal of numerical modelling. Volume 29:Number 3(2016:May/Jun.)
• Page Start: 437
• Page End: 445
• Publication Date: 2015-08-20
• Subjects: transformers modeling -- scalable equivalent circuit -- electromagnetic (EM) simulation; Electric networks -- Mathematical models -- Periodicals; Electronics -- Mathematical models -- Periodicals; 621.3011
• DOI: 10.1002/jnm.2092
• Languages: English
• ISSNs: 0894-3370

Abstract

Summary: Scalable modeling with very simple topology for stacked millimeter‐wave transformers is presented. Because of high‐frequency effect and thick metal effect, the architecture is based on single‐ π and double‐ π network for transformers with turn ratio 1:1 and 1:2, respectively. The model parameters are extracted from two factors—the layout and process data. Simple and accurate expressions for the self‐inductance, mutual coupling inductance, and oxide capacitance are provided for the model. The proposed model is verified by 65 nm technology transformers. A very close agreement is shown for S‐parameter, self‐inductances of each coil, and coupling coefficient up to 110 GHz. Copyright © 2015 John Wiley & Sons, Ltd.