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HARVARD Citation
Benabdelmoumene, A. et al. (2016). On the turn-around phenomenon in n-MOS transistors under NBTI conditions. Solid-state electronics. pp. 34-40. [Online].
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Benabdelmoumene, A. et al. (2016). On the turn-around phenomenon in n-MOS transistors under NBTI conditions. Solid-state electronics. pp. 34-40. [Online].