Nanoelectronics: Amorphous Boron Nitride: A Universal, Ultrathin Dielectric For 2D Nanoelectronics (Adv. Funct. Mater. 16/2016). (April 2016)

• Record Type: Journal Article
• Authors: Glavin, Nicholas R.; Muratore, Christopher; Jespersen, Michael L.; Hu, Jianjun; Hagerty, Phillip T.; Hilton, Al M.; Blake, Austin T.; Grabowski, Christopher A.; Durstock, Michael F.; McConney, Michael E.; Hilgefort, Drew M.; Fisher, Timothy S.; Voevodin, Andrey A.
• Is Part Of: Advanced functional materials. Volume 26:Number 16(2016)
• Page Start: 2771
• Page End: 2771
• Publication Date: 2016-04
• Subjects: 2D -- boron nitride -- nanoelectronics -- ultrathin dielectrics; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201670102
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : On page 2640, N. R. Glavin and co‐workers demonstrate deposition of ultra‐thin amorphous boron nitride films on a two‐dimensional MoS2 transistor setup, via low‐temperature pulsed laser deposition. Benefits of this universal process include large scale deposition areas, universal structure and chemistry on numerous prospective substrates, substrate temperatures below 200 °C, and exceptional dielectric performance for next generation nanoelectronic systems.