Molybdenum oxide thin films in CdTe‐based electronic and optoelectronic devices. Issue 4 (11th February 2016)

• Record Type: Journal Article
• Authors: Solovan, M. M.; Brus, V. V.; Mostovyi, A. I.; Maryanchuk, P. D.; Tresso, E.; Gavaleshko, N. M.
• Is Part Of: Physica status solidi. Volume 10:Issue 4(2016)
• Page Start: 346
• Page End: 349
• Publication Date: 2016-02-11
• Subjects: MoOx -- CdTe -- heterojunction -- ohmic contact -- current transport; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201600010
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : This paper reports on the both possible applications of molybdenum oxide (MoO x ) thin films in combination with hole or electron conducting CdTe. The high quality ohmic contancts and strongly rectifying photodiodes were prepared by the DC magnetron sputtering of MoO x thin films onto freshly cleaved p‐ and n‐type CdTe single crystal substrates. The analysis of DC and AC electrical properties of the MoO x / p‐CdTe ohmic contact was carried out. The dominating current transport mechanisms through the MoO x /p‐CdTe heterojunction at forward and reverse bias were determined. The unoptimized heterojunction photodiode showed promising rectifying and photoelectrical characteristics for practical application in the photoconductive mode. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) Abstract : This Letter reports on the both possible applications of molybdenum oxide (MoO x ) thin films in combination with hole or electron conducting CdTe. The high quality ohmic contacts and strongly rectifying photodiodes were prepared by the DC magnetron sputtering of MoO x thin films onto freshly cleaved p‐ and n‐type CdTe single crystal substrates. The heterojunction photodiodes showed promising rectifying and photoelectrical characteristics for practical application in the photoconductive mode.