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HARVARD Citation
Weimann, N. et al. (n.d.). SciFab –a wafer‐level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm‐wave applications. Physica status solidi. 213 (4), pp. 909-916. [Online].
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Weimann, N. et al. (n.d.). SciFab –a wafer‐level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm‐wave applications. Physica status solidi. 213 (4), pp. 909-916. [Online].