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HARVARD Citation
Shindo, S. et al. (n.d.). Contact resistivity of amorphous and crystalline GeCu2Te3 to W electrode for phase change random access memory. Materials science in semiconductor processing. pp. 1-6. [Online].
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Shindo, S. et al. (n.d.). Contact resistivity of amorphous and crystalline GeCu2Te3 to W electrode for phase change random access memory. Materials science in semiconductor processing. pp. 1-6. [Online].