An Effective Approach for the Identification of Carrier Type and Local Inversion Doping in Graphene by Biased Atomic Force Microscopy. (4th February 2016)

• Record Type: Journal Article
• Authors: Jia, Yuping; Guo, Liwei; Li, Zhilin; Huang, Jiao; Lu, Wei; Chen, Hongxiang; Chen, Xiaolong
• Is Part Of: Advanced Electronic Materials. Volume 2:Number 4(2016)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-02-04
• Subjects: AFM -- carrier type -- graphene -- inversion doping; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201500255
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Electrically biased tapping mode (eb‐TM) in atomic force microscopy is demonstrated as an efficient and convenient method for determining carrier type in macroscale and local inversion doping in nanoscale of graphene. eb‐TM is a nondestructive, high spatial resolution, high sensitivity, and universal method to identify electrical inhomogeneity of any surface materials.