Control of wavelength and decay time of photoluminescence for InAs quantum dots grown on InP(311)B using the digital embedding method. Issue 4 (8th February 2016)

• Record Type: Journal Article
• Authors: Akahane, Kouichi; Yamamoto, Naokatsu; Umezawa, Toshimasa; Kawanishi, Tetsuya; Tanaka, Takehiro; Nakamura, Shin‐Ichi; Sotobayashi, Hideyuki
• Is Part Of: Physica status solidi. Volume 253:Issue 4(2016)
• Page Start: 640
• Page End: 643
• Publication Date: 2016-02-08
• Subjects: InAs -- InP -- molecular beam epitaxy -- photoluminescence -- quantum dots -- superlattices; Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201552483
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : A lattice‐matched InGaAs and InAlAs superlattice (SL) was used to embed InAs quantum dots (QDs) on an InP(311)B substrate; this is called the digital embedding method (DEM). We controlled the emission wavelength of the InAs QDs by changing the period of the SL or the ratio of the thickness of InGaAs to that of InAlAs. In addition, we investigated the time‐resolved photoluminescence (PL) of the InAs QDs using the DEM. The decay time of the PL from the QDs was estimated by fitting a single exponential curve and was 380 ps in the DEM sample and 700 ps in the reference sample with a conventional InGaAlAs barrier. The decay time was clearly altered by changing the embedding structure. Therefore, carrier dynamics could be controlled using the DEM.