Improved Schottky contacts to InGaN alloys by a photoelectrochemical treatment. Issue 4 (3rd December 2015)

• Record Type: Journal Article
• Authors: Tang, Yin; Cai, Qing; Yang, Lianhong; Xue, Junjun; Chen, Dunjun; Lu, Hai; Zhang, Rong; Zheng, Youdou
• Is Part Of: Physica status solidi. Volume 213:Issue 4(2016:Apr.)
• Page Start: 1034
• Page End: 1038
• Publication Date: 2015-12-03
• Subjects: Frenkel–Poole emission -- InGaN -- photoelectrochemical treatment -- Schottky barrier height -- thermionic‐field emission; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201532717
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : We report on improved electrical properties of Schottky contacts to InGaN alloys by introducing a photoelectrochemical treatment. The Schottky barrier height determined by a thermionic‐field emission model, a dominating forward‐current‐transport mechanism, increased by 0.15 eV from 1.02 eV for conventional contacts to 1.17 eV for those with photoelectrochemical treatment at room temperature, while the ideality factors is closer to 1 after photoelectrochemical treatment. Furthermore, the reverse leakage mechanism varies from an ohmic transport mechanism at relatively low voltage and space charge‐limited current mechanism at relatively high voltage for conventional contacts to Frenkel–Poole emission for improved Schottky contacts, which is attributed to partly removing surface states by the photoelectrochemical treatment.