Chalcogenide perovskites – an emerging class of ionic semiconductors. (April 2016)

• Record Type: Journal Article
• Authors: Perera, Samanthe; Hui, Haolei; Zhao, Chuan; Xue, Hongtao; Sun, Fan; Deng, Chenhua; Gross, Nelson; Milleville, Chris; Xu, Xiaohong; Watson, David F.; Weinstein, Bernard; Sun, Yi-Yang; Zhang, Shengbai; Zeng, Hao
• Is Part Of: Nano energy. Volume 22(2016:Apr.)
• Page Start: 129
• Page End: 135
• Publication Date: 2016-04
• Subjects: Chalcogenide perovskite -- Sulfurization -- Band gap engineering -- Ionic semiconductor; Nanoscience -- Periodicals; Nanotechnology -- Periodicals; Nanostructured materials -- Periodicals; Power resources -- Technological innovations -- Periodicals; Nanoscience; Nanostructured materials; Nanotechnology; Power resources -- Technological innovations; Periodicals; 621.042
• DOI: 10.1016/j.nanoen.2016.02.020
• Languages: English
• ISSNs: 2211-2855

Abstract

Abstract: We report the synthesis and characterization of a novel class of ionic semiconductor materials – inorganic chalcogenide perovskites. Several different compounds including BaZrS3, CaZrS3, SrTiS3 and SrZrS3 were synthesized by high temperature sulfurization of their oxide counterparts. Their crystal structures were identified by XRD and composition by EDX. UV–vis and photoluminescence measurements confirmed that they are direct gap semiconductors with band gap values consistent with theoretical predictions. By adopting an anion alloying approach, we demonstrate widely tunable band gap from 1.73 eV to 2.87 eV. These strongly ionic semiconductors provide a new avenue for engineering the semiconducting properties for applications such as energy harvesting, solid state lighting and sensing. Graphical abstract: Highlights: Chalcogenide perovskites are a novel class of ionic semiconductors. The band gap values of the materials can be systematically tuned by anion alloying. BaZrS3 is a stable and earth abundant semiconductor with potential PV applications.