Cite
HARVARD Citation
Meneghini, M. et al. (2016). Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. Microelectronics and reliability. pp. 177-184. [Online].
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Meneghini, M. et al. (2016). Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. Microelectronics and reliability. pp. 177-184. [Online].