Extremely Large Magnetoresistance at Low Magnetic Field by Coupling the Nonlinear Transport Effect and the Anomalous Hall Effect. Issue 14 (9th February 2016)

• Record Type: Journal Article
• Authors: Luo, Zhaochu; Xiong, Chengyue; Zhang, Xu; Guo, Zhen‐Gang; Cai, Jianwang; Zhang, Xiaozhong
• Is Part Of: Advanced materials. Volume 28:Issue 14(2016)
• Page Start: 2760
• Page End: 2764
• Publication Date: 2016-02-09
• Subjects: nonlinear properties -- magnetic materials -- electron transport -- magnetoresistance; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201504023
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : The anomalous Hall effect of a magnetic material is coupled to the nonlinear transport effect of a semiconductor material in a simple structure to achieve a large geometric magnetoresistance (MR) based on a diode‐assisted mechanism. An extremely large MR (>10 4 %) at low magnetic fields (1 mT) is observed at room temperature. This MR device shows potential for use as a logic gate for the four basic Boolean logic operations.