Bias‐Stress‐Stable Low‐Voltage Organic Field‐Effect Transistors with Ultrathin Polymer Dielectric on C Nanoparticles. (4th February 2016)

• Record Type: Journal Article
• Authors: Liu, Jie; Wang, Chen‐Huan; Liu, Chang‐Hai; Li, Qin‐Liang; Gao, Xu; Wang, Sui‐Dong
• Is Part Of: Advanced Electronic Materials. Volume 2:Number 4(2016)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-02-04
• Subjects: C nanoparticles -- low voltage devices -- organic field‐effect transistors -- polymer dielectrics; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201500349
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Hybrid gate dielectrics, fabricated by depositing low‐ k polymers on sputtered C nanoparticles (NPs), show ultrathin, robust, and pinhole‐free features. The C NPs play a key role in the formation of good dielectrics. Based on the dielectrics, high‐performance low‐voltage organic field‐effect transistors (OFETs) with excellent bias stress stability and flexible compatibility are achieved. This is a general method for various low‐ k polymers and applicable to both p‐type and n‐type OFETs.