Synthesis and characterization of (Ga1−xZnx)(N1−xOx) nanocrystals with a wide range of compositions. Issue 8 (3rd August 2015)

• Record Type: Journal Article
• Authors: Lee, Kyureon; Lu, Ying-Gang; Chuang, Chi-Hung; Ciston, Jim; Dukovic, Gordana
• Is Part Of: Journal of materials chemistry. Volume 4:Issue 8(2016)
• Page Start: 2927
• Page End: 2935
• Publication Date: 2015-08-03
• Subjects: Materials -- Research -- Periodicals; Chemistry, Analytic -- Periodicals; Environmental sciences -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c5ta04314j
• Languages: English
• ISSNs: 2050-7488

Abstract

Abstract : (Ga1− x Zn x )(N1− x O x ) nanocrystals with a wide range of compositions and band gaps are formed by topotactic nucleation at ZnO/ZnGa2 O4 interfaces. Abstract : We describe the synthesis and characterization of wurtzite (Ga1− x Zn x )(N1− x O x ) nanocrystals with a wide range of compositions and a focus on properties relevant for solar fuel generation. (Ga1− x Zn x )(N1− x O x ), a solid solution of GaN and ZnO, is an intriguing material because it exhibits composition-dependent visible absorption even though the parent semiconductors absorb in the UV. When functionalized with co-catalysts, (Ga1− x Zn x )(N1− x O x ) is also capable of water splitting under visible irradiation. Here, we examine the synthesis of (Ga1− x Zn x )(N1− x O x ) nanocrystals to understand how they form by nitridation of ZnO and ZnGa2 O4 nanocrystalline precursors. We find that the ZnO precursor is critical for the formation of crystalline (Ga1− x Zn x )(N1− x O x ) at 650 °C, consistent with a mechanism in which wurtzite (Ga1− x Zn x )(N1− x O x ) nucleates topotactically on wurtzite ZnO at an interface with ZnGa2 O4 . Using this information, we expand the range of compositions from previously reported 0.30 ≤ x ≤ 0.87 to include the low- x and high- x ends of the range. The resulting compositions, 0.06 ≤ x ≤ 0.98, constitute the widest range of (Ga1− x Zn x )(N1− x O x ) compositions obtained by one synthetic method. We then examine how the band gap depends on sample composition and find a minimum of 2.25 eV at x = 0.87, corresponding to a maximum possible solar-to-H2 power conversion efficiency of 12%. Finally, we examine the photoelectrochemical (PEC) oxidation behavior of thick films of (Ga1− x Zn x )(N1− x O x ) nanocrystals with x = 0.40, 0.52, and 0.87 under visible illumination. (Ga1− x Zn x )(N1− x O x ) nanocrystals with x = 0.40 exhibit solar PEC oxidation activity that, while too low for practical applications, is higher than that of bulk (Ga1− x Zn x )(N1− x O x ) of the same composition. The highest photocurrents are observed at x = 0.52, even though x = 0.87 absorbs more visible light, illustrating that the observed photocurrents are a result of an interplay of multiple parameters which remain to be elucidated. This set of characterizations provides information useful for future studies of composition-dependent PEC properties of nanoscale (Ga1− x Zn x )(N1− x O x ).