A new parallel ZVS converter with less power switches and low current stress components. (19th June 2015)

• Record Type: Journal Article
• Authors: Lin, Bor‐Ren; Chu, Chung‐Wei
• Is Part Of: International journal of circuit theory and applications. Volume 44:Number 4(2016:Apr.)
• Page Start: 874
• Page End: 892
• Publication Date: 2015-06-19
• Subjects: analog circuit -- pulse‐width modulation -- DC/DC converter -- ZVS -- efficiency -- power converter; Electric circuit analysis -- Periodicals; 621.319205
• DOI: 10.1002/cta.2111
• Languages: English
• ISSNs: 0098-9886

Abstract

Summary: A new direct current (DC)/DC converter with parallel circuits is presented for medium voltage and power applications. There are five pulse‐width modulation circuits in the proposed converter to reduce current stress at low voltage side for high output current applications. These five circuits share the same power switches in order to reduce switch counts. To reduce the converter size, conduction loss, and voltage stress of power semiconductors, the series connections of power metal‐oxide‐semiconductor field‐effect transistor (MOSFET) with high switching frequency instead of insulated gate bipolar transistor (IGBT) with low switching frequency are adopted. Thus, the voltage stress of MOSFETs is clamped at half of input voltage. The switched capacitor circuit is adopted to balance input split capacitor voltages. Asymmetric pulse‐width modulation scheme is adopted to generate the necessary switching signals of MOSFETs and regulate output voltage. Based on the resonant behavior at the transition interval of power switches, all MOSFETs are turned on under zero voltage switching from 50% load to 100% load. The circuit configuration, operation principle, converter performance, and design example are discussed in detail. Finally, experimental verifications with a 1.92 kW prototype are provided to verify the performance of the proposed converter. Copyright © 2015 John Wiley & Sons, Ltd. Abstract : A new DC/DC converter with parallel circuits is presented for medium voltage and power applications. There are five pulse‐width modulation circuits in the proposed converter to reduce current stress at low voltage side for high output current applications. These five circuits share the same power switches in order to reduce switch counts. To reduce the converter size, conduction loss, and voltage stress of power semiconductors, the series connections of power MOSFETs with high switching frequency instead of IGBTs with low switching frequency are adopted.