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HARVARD Citation
Zhang, J. et al. (2016). A new physical insight of RESURF effects based on gradual charge appointment concept for bulk silicon lateral power devices. Superlattices and microstructures. pp. 111-123. [Online].
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Zhang, J. et al. (2016). A new physical insight of RESURF effects based on gradual charge appointment concept for bulk silicon lateral power devices. Superlattices and microstructures. pp. 111-123. [Online].