P‐Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor. Issue 12 (25th January 2016)

• Record Type: Journal Article
• Authors: Liu, Xiaochi; Qu, Deshun; Ryu, Jungjin; Ahmed, Faisal; Yang, Zheng; Lee, Daeyeong; Yoo, Won Jong
• Is Part Of: Advanced materials. Volume 28:Issue 12(2016)
• Page Start: 2345
• Page End: 2351
• Publication Date: 2016-01-25
• Subjects: chemical doping -- contact resistance -- MoS2 -- p‐type -- transistors; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201505154
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : A high‐performance multilayer MoS2 p‐type field‐effect transistor is realized via controllable chemical doping, which shows an excellent on/off ratio of 10 9 and a maximum hole mobility of 132 cm 2 V −1 s −1 at 133 K. The developed technique will enable 2D materials to be used for future high‐efficiency and low‐power semiconductor device applications.