High‐Mobility Transistors Based on Large‐Area and Highly Crystalline CVD‐Grown MoSe2 Films on Insulating Substrates. Issue 12 (11th January 2016)

• Record Type: Journal Article
• Authors: Rhyee, Jong‐Soo; Kwon, Junyeon; Dak, Piyush; Kim, Jin Hee; Kim, Seung Min; Park, Jozeph; Hong, Young Ki; Song, Won Geun; Omkaram, Inturu; Alam, Muhammad A.; Kim, Sunkook
• Is Part Of: Advanced materials. Volume 28:Issue 12(2016)
• Page Start: 2316
• Page End: 2321
• Publication Date: 2016-01-11
• Subjects: insulating substrates -- MoSe2 -- single‐crystals -- thin‐film transistors -- transition metal dichalcogenides; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201504789
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Large‐area and highly crystalline CVD‐grown multilayer MoSe2 films exhibit a well‐defined crystal structure (2H phase) and large grains reaching several hundred micrometers. Multilayer MoSe2 transistors exhibit high mobility up to 121 cm 2 V −1 s −1 and excellent mechanical stability. These results suggest that high mobility materials will be indispensable for various future applications such as high‐resolution displays and human‐centric soft electronics.