Enhancing light emission efficiency without color change in post-transition metal chalcogenides. Issue 11 (29th February 2016)

• Record Type: Journal Article
• Authors: Wang, Cong; Yang, Shengxue; Cai, Hui; Ataca, Can; Chen, Hui; Zhang, Xinzheng; Xu, Jingjun; Chen, Bin; Wu, Kedi; Zhang, Haoran; Liu, Luqi; Li, Jingbo; Grossman, Jeffrey C.; Tongay, Sefaattin; Liu, Qian
• Is Part Of: Nanoscale. Volume 8:Issue 11(2016)
• Page Start: 5820
• Page End: 5825
• Publication Date: 2016-02-29
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c5nr08692b
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : 2D materials can take a large amount of mechanical deformation before reaching the fracture limit due to their high Young's modulus, which provides a way to tune their properties by strain engineering. Abstract : Two-dimensional (2D) materials can take a large amount of mechanical deformation before reaching the fracture limit due to their high Young's modulus, and this in return, provides a way to tune the properties of 2D materials by strain engineering. Previous works have shown that the optical band gap of transition metal chalcogenides (TMDs) can be modulated by strain, resulting in a drift of the photoluminescence (PL) peak position and a decrease (or little change) in PL intensity. Here, we report a member of the post-transition metal chalcogenides (PTMCs), 2D-GaSe sheets, displaying vastly different phenomena under strain. Strained 2D-GaSe emits photons at almost the same wavelength as unstrained material but appears an order of magnitude brighter. In contrast to TMDs, optical spectroscopy measurements reveal that changes in the optical properties are mostly related to the colossal optical absorption anisotropy of GaSe, instead of commonly accepted strain-induced band renormalization. Results suggest that the light–matter interaction and the optical properties of 2D-GaSe can be controlled at will by manipulating the optical absorption.