Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells. Issue 11 (1st March 2016)

• Record Type: Journal Article
• Authors: Dong, Hailiang; Sun, Jing; Ma, Shufang; Liang, Jian; Lu, Taiping; Liu, Xuguang; Xu, Bingshe
• Is Part Of: Nanoscale. Volume 8:Issue 11(2016)
• Page Start: 6043
• Page End: 6056
• Publication Date: 2016-03-01
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c5nr07938a
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : InGaAs/GaAsP MQWs grown on 2° and 15° substrates show the quantum wire and pyramidal self-controlled quantum-dot properties, respectively. Abstract : InGaAs/GaAsP multiple quantum wells (MQWs) were grown by metal–organic chemical vapor deposition on vicinal GaAs (001) substrates with different miscut angles of 0°, 2° and 15° towards [110]. The crystal structures of InGaAs/GaAsP were characterized by high-resolution X-ray diffraction and Raman spectroscopy. The surface morphologies of InGaAs/GaAsP MQWs were observed by atomic force microscopy. The mechanisms for step flow, step bunching and pyramid growth on 0°, 2° and 15° misoriented substrates were discussed. The results provide a comprehensive phenomenological understanding of the self-ordering mechanism of vicinal GaAs substrates, which could be harnessed for designing the quantum optical properties of low-dimensional systems. From low-temperature photoluminescence, it was observed that the luminescence from the MQWs grown on a vicinal surface exhibits a red-shift with respect to the 0° case. An extra emission was observed from the 2° and 15° off samples, indicating the characteristics of quantum wire and pyramidal self-controlled quantum-dot systems, respectively. Its absence from the PL spectrum on 0° surfaces indicates that indium segregation is modified on the surfaces. The relationship between InGaAs/GaAsP MQWs grown on vicinal substrates and their optical and structural properties was explained, which provides a technological basis for obtaining different self-controlled nanostructures.