Defect‐Modulated Transistors and Gas‐Enhanced Photodetectors on ReS2 Nanosheets. Issue 6 (18th January 2016)
- Record Type:
- Journal Article
- Title:
- Defect‐Modulated Transistors and Gas‐Enhanced Photodetectors on ReS2 Nanosheets. Issue 6 (18th January 2016)
- Main Title:
- Defect‐Modulated Transistors and Gas‐Enhanced Photodetectors on ReS2 Nanosheets
- Authors:
- Yang, Shengxue
Kang, Jun
Yue, Qu
Coey, J. M. D.
Jiang, Chengbao - Abstract:
- Abstract : Sulfur vacancies are demonstrated to modulate the interlayer interaction and bandgap in ReS2 nanosheet transistors, influencing the current on/off ratio and mobility.
- Is Part Of:
- Advanced materials interfaces. Volume 3:Issue 6(2016)
- Journal:
- Advanced materials interfaces
- Issue:
- Volume 3:Issue 6(2016)
- Issue Display:
- Volume 3, Issue 6 (2016)
- Year:
- 2016
- Volume:
- 3
- Issue:
- 6
- Issue Sort Value:
- 2016-0003-0006-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2016-01-18
- Subjects:
- field effect transistors -- gas‐adsorption -- photoresponsivity -- sulfur‐vacancies
Materials science -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2196-7350 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/admi.201500707 ↗
- Languages:
- English
- ISSNs:
- 2196-7350
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.898450
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 793.xml