Experimental Realization of a Topological p–n Junction by Intrinsic Defect Grading. Issue 11 (18th January 2016)

• Record Type: Journal Article
• Authors: Bathon, Thomas; Achilli, Simona; Sessi, Paolo; Golyashov, Vladimir Andreevich; Kokh, Konstantin Aleksandrovich; Tereshchenko, Oleg Evgenievich; Bode, Matthias
• Is Part Of: Advanced materials. Volume 28:Issue 11(2016)
• Page Start: 2183
• Page End: 2188
• Publication Date: 2016-01-18
• Subjects: density functional theory -- p–n junctions -- scanning tunneling microscopy -- topological insulators -- transport; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201504771
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : A Bi2 Te3 single crystal is grown with the modified Bridgman technique. The crystal has a nominal composition with a Te content of 61 mol% resulting in the existence of two distinct regions, p‐ and n‐doped, respectively; color‐coded tunneling spectra are taken over 60 nm at the transition region.