DC-bias dependent impedance spectroscopy of BaTiO3–Bi(Zn1/2Ti1/2)O3 ceramics. Issue 9 (16th February 2016)

• Record Type: Journal Article
• Authors: Kumar, Nitish; Patterson, Eric A.; Frömling, Till; Cann, David P.
• Is Part Of: Journal of materials chemistry. Volume 4:Issue 9(2016)
• Page Start: 1782
• Page End: 1786
• Publication Date: 2016-02-16
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c5tc04247j
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : In p-type BaTiO3, a deviation from Ohm's law behavior at low fields was noted with a significant decrease in resistivity values; whereas the response of n-type Bi(Zn1/2 Ti1/2 )O3 -containing ceramics was insensitive to bias. Abstract : This report discusses the voltage-stability of the dielectric and transport properties of BaTiO3 –Bi(Zn1/2 Ti1/2 )O3 (BT–BZT) ceramics which have shown excellent properties for emerging energy applications. For p-type BaTiO3, the ceramics deviated from Ohm's law behavior at very low voltage levels along with a reversible drop in bulk resistivity by several orders of magnitude starting at bias fields as low as 0.1 kV cm −1 (∼8 V). In contrast, n-type BT–BZT ceramics exhibited a small ( i.e. less than one order of magnitude) increase in resistivity on application of small field levels. These data indicate a hole-generation mechanism which becomes active at a low voltage threshold. The bulk capacitance values calculated using AC impedance spectroscopy, however, were relatively unaffected (<15% change) by this application of a DC bias (up to ∼0.25 kV cm −1 ). These findings provide important insights into the electric transport mechanisms in BT-based ceramics.