Highly Asymmetric n+–p Heterojunction Quantum‐Dot Solar Cells with Significantly Improved Charge‐Collection Efficiencies. Issue 9 (21st December 2015)

• Record Type: Journal Article
• Authors: Choi, Min‐Jae; Kim, Sunchuel; Lim, Hunhee; Choi, Jaesuk; Sim, Dong Min; Yim, Soonmin; Ahn, Byung Tae; Kim, Jin Young; Jung, Yeon Sik
• Is Part Of: Advanced materials. Volume 28:Issue 9(2016)
• Page Start: 1780
• Page End: 1787
• Publication Date: 2015-12-21
• Subjects: colloidal quantum dots -- depletion region width -- heavily doping -- metal oxides -- solar cells; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201503879
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : The depletion region width of metal‐oxide/quantum‐dot (QD) heterojunction solar cells is increased by a new method in which heavily boron‐doped n + ‐ZnO is employed. It is effectively increased in the QD layer by 30% compared to the counterpart with conventional n‐ZnO, and provides 41% and 37% improvement of J sc (16.7 mA cm −2 to 23.5 mA cm −2 ) and power conversion efficiency (5.52% to 7.55%), respectively.