Strain Modulation in Graphene/ZnO Nanorod Film Schottky Junction for Enhanced Photosensing Performance. (29th January 2016)

• Record Type: Journal Article
• Authors: Liu, Shuo; Liao, Qingliang; Lu, Shengnan; Zhang, Zheng; Zhang, Guangjie; Zhang, Yue
• Is Part Of: Advanced functional materials. Volume 26:Number 9(2016)
• Page Start: 1347
• Page End: 1353
• Publication Date: 2016-01-29
• Subjects: graphene -- photodetector -- Schottky junction -- strain modulation -- ZnO; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201503905
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : Strain modulation in flexible semiconductor heterojunctions has always been considered as an effective way to modulate the performance of nanodevices. In this work, a graphene/ZnO nanorods film Schottky junction has been constructed. It shows considerable responsivity and fast on‐off switch to the UV illumination. Through utilizing the piezopotential induced by the atoms displacement in ZnO under the compressive strain, 17% enhanced photosensing property is achieved in this hybrid structure when applying −0.349% strain. This performance improvement can be ascribed to the Schottky barrier height modification by the strain‐induced piezopotential, which results in the facilitation of electron–hole separation in the graphene/ZnO interface. An energy band principle as well as a finite element analysis is proposed to understand this phenomenon. The results here provide a facile approach to boost the optoelectronic performance of graphene/ZnO heterostructure, which may also be applied to other Schottky junction based hybrid devices. Abstract : Strain modulation in graphene/ZnO film Schottky junction is investigated. Utilizing the piezopotential generated in ZnO under compressive strain, 17% enhanced photosensing performance is achieved when applying −0.349% strain. The results here provide a facile approach to boost the optoelectronic performance of graphene/ZnO heterostructures, which may also be applied to other Schottky junction‐based hybrid devices.