Cite
HARVARD Citation
Deng, T. et al. (2016). Improved performance of ITO/TiO2/HfO2/Pt random resistive accessory memory by nitrogen annealing treatment. Microelectronics and reliability. pp. 34-38. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Deng, T. et al. (2016). Improved performance of ITO/TiO2/HfO2/Pt random resistive accessory memory by nitrogen annealing treatment. Microelectronics and reliability. pp. 34-38. [Online].