Fabrication and optical properties of type‐II InP/InAs nanowire/quantum‐dot heterostructures. Issue 2 (26th November 2015)

• Record Type: Journal Article
• Authors: Yan, Xin; Zhang, Xia; Li, Junshuai; Wu, Yao; Li, Bang; Ren, Xiaomin
• Is Part Of: Physica status solidi. Volume 10:Issue 2(2016)
• Page Start: 168
• Page End: 171
• Publication Date: 2015-11-26
• Subjects: nanowires -- quantum dots -- InAs -- InP -- heterostructures -- type‐II band alignment -- photoluminescence; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201510403
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : The growth and optical properties of InAs quantum dots on a pure zinc blende InP nanowire are investigated. The quantum dots are formed in Stranski–Krastanov mode and exhibit pure zinc blende crystal structure. A substantial blueshift of the dots peak with a cube‐root dependence on the excitation power is observed, suggesting a type‐II band alignment. The peak position of dots initially red‐shifts and then blue‐shifts with increasing temperature, which is attributed to the carrier redistribution among the quantum dots. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) Abstract : Stranski–Krastanov defect‐free zinc‐blende InAs quantum dots are obtained on the side wall of ⟨110⟩ InP nanowire. A blueshift of the dot peaks with a cube‐root dependence on the excitation power is observed, suggesting a type‐II band alignment. The peak position of the dots initially red‐shifts and then blue‐shifts with increasing temperature, which is attributed to the carrier redistribution among the dots.