A 3–7 GHz GaN HEMT power amplifier. Issue 4 (April 2016)

• Record Type: Journal Article
• Authors: Cheng, Zhiqun; Zhu, Dandan; Yan, Guoguo; Liu, Guohua; Gao, Steven
• Is Part Of: Microwave and optical technology letters. Volume 58:Issue 4(2016:Apr.)
• Page Start: 901
• Page End: 904
• Publication Date: 2016-04
• Subjects: GaN HEMT -- ultra‐broadband -- power amplifier -- device modeling -- output power; Microwaves -- Periodicals; Optics -- Periodicals; 621
• DOI: 10.1002/mop.29699
• Languages: English
• ISSNs: 0895-2477

Abstract

ABSTRACT: An ultra‐broadband power amplifier (PA) with TGF2023‐2‐10 GaN HEMT operating in the frequency of 3–7 GHz is presented in this article. The GaN HEMT transistor is modeled and the frequency compensation and multi impedance matching approach with different characteristic impedances of transmission line are employed for broadband impedance matching. The measured results agree well with the simulated results. The PA has output power of more than 41.2 dBm and small‐signal gain of 8 dB at the frequency range of 3–7 GHz under DC bias of Vds = 28 V, Vgs = −2.98 V. Details of device modeling, amplifier designs, and simulated and measured results are presented and discussed. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:901–904, 2016