New pixel circuits for controlling threshold voltage by back‐gate bias voltage using crystalline oxide semiconductor FETs. Issue 1 (28th December 2015)

• Record Type: Journal Article
• Authors: Kaneyasu, Makoto; Toyotaka, Kouhei; Shishido, Hideaki; Isa, Toshiyuki; Eguchi, Shingo; Miyake, Hiroyuki; Hirakata, Yoshiharu; Yamazaki, Shunpei; Dobashi, Masayoshi; Fujiwara, Chieko
• Is Part Of: Journal of the Society for Information Display. Volume 24:Issue 1(2016)
• Page Start: 35
• Page End: 43
• Publication Date: 2015-12-28
• Subjects: oxide semiconductor -- CAAC‐IGZO -- OLED -- threshold voltage compensation; Information display systems -- Periodicals; 621.38154205
• DOI: 10.1002/jsid.406
• Languages: English
• ISSNs: 1071-0922

Abstract

Abstract: We devised a threshold voltage compensation pixel circuit using back‐gate bias voltage. Variation in threshold voltages can be reduced to 10% in simulation while improving the saturation characteristics of a driving transistor. The pixel circuit can compensate not only threshold variation but also mobility variation. We fabricated a 5.29‐in Quad‐VGA organic light emitting diode display using this pixel circuit. Abstract : We devised a threshold voltage compensation pixel circuit using back‐gate bias voltage. Variation in threshold voltages can be reduced to 10% in simulation while improving the saturation characteristics of a driving transistor. The pixel circuit can compensate not only threshold variation but also mobility variation. We fabricated a 5.29‐in Quad‐VGA organic light emitting diode display using this pixel circuit.