Physical model of threshold switching in NbO2 based memristors. Issue 124 (27th November 2015)

• Record Type: Journal Article
• Authors: Slesazeck, S.; Mähne, H.; Wylezich, H.; Wachowiak, A.; Radhakrishnan, J.; Ascoli, A.; Tetzlaff, R.; Mikolajick, T.
• Is Part Of: RSC advances. Volume 5:Issue 124(2015)
• Page Start: 102318
• Page End: 102322
• Publication Date: 2015-11-27
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c5ra19300a
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : This paper investigates the origin of the threshold switching effect in niobium oxide based filamentary switching cells. Abstract : This paper investigates the origin of the threshold switching effect in NbO2 . It is found that the effect is independent of the metal-insulator-transition but can be explained by a trap-assisted Frenkel–Poole like conduction mechanism in combination with a moderate temperature increase by only 150 K due to Joule heating. These findings lead to the development of a physics based model which is of pure electrical nature and explains the occurrence of the threshold effect as well as the negative-differential resistance behavior observed in NbO2 .