Highly efficient low temperature solution processable planar type CH3NH3PbI3 perovskite flexible solar cells. Issue 5 (14th January 2016)

• Record Type: Journal Article
• Authors: Heo, Jin Hyuck; Lee, Min Ho; Han, Hye Ji; Patil, Basavaraj Rudragouda; Yu, Jae Su; Im, Sang Hyuk
• Is Part Of: Journal of materials chemistry. Volume 4:Issue 5(2016)
• Page Start: 1572
• Page End: 1578
• Publication Date: 2016-01-14
• Subjects: Materials -- Research -- Periodicals; Chemistry, Analytic -- Periodicals; Environmental sciences -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c5ta09520d
• Languages: English
• ISSNs: 2050-7488

Abstract

Abstract : A highly efficient PEN/ITO/ZnO/CH3 NH3 PbI3 perovskite/PTAA/Au flexible planar solar cell with 1.1 V V oc, 18.7 mA cm −2 J sc, 75% FF, and 15.4% η for the forward scan direction and 1.1 V V oc, 18.7 mA cm −2 J sc, 76% FF and 15.6% η for the reverse scan direction under illumination of 1 Sun was demonstrated. Abstract : The current density–voltage ( J – V ) hysteresis and power conversion efficiency ( η ) of planar type CH3 NH3 PbI3 perovskite solar cells with TiO2 and ZnO electron conductors, which are formed by high temperature spray pyrolysis deposition at 450 °C and by room temperature spin-coating and subsequent heat-treatment at 150 °C, respectively, were compared. The ZnO based perovskite solar cells exhibited better efficiency deviation (15.96 ± 1.07%) and less J – V hysteresis than the TiO2 based cells (15.20 ± 1.23%) because the ZnO based cell has 1.2 fold longer charge carrier life time ( τ n ) than the ZnO based cell and the ZnO electron conductor has better electron conductivity (0.0031 mS cm −1 ) than the TiO2 electron conductor (0.00006 mS cm −1 ), thereby balancing the electron flux and the hole flux more. Due to the low temperature solution processability of the ZnO electron conductor, we could demonstrate a highly efficient PEN (poly-ethylenenaphthalate)/ITO/ZnO/CH3 NH3 PbI3 perovskite/PTAA/Au flexible planar solar cell with 1.1 V open-circuit voltage ( V oc ), 18.7 short-circuit current density (mA cm −2 ) J sc, 75% fill factor (FF), and 15.4% η for the forward scan direction and 1.1 V V oc, 18.7 mA cm −2 J sc, 76% FF and 15.6% η for the reverse scan direction under illumination of 1 Sun.