Multi-floor cascading ferroelectric nanostructures: multiple data writing-based multi-level non-volatile memory devices. Issue 3 (22nd December 2015)

• Record Type: Journal Article
• Authors: Hyun, Seung; Kwon, Owoong; Lee, Bom-yi; Seol, Daehee; Park, Beomjin; Lee, Jae Yong; Lee, Ju Hyun; Kim, Yunseok; Kim, Jin Kon
• Is Part Of: Nanoscale. Volume 8:Issue 3(2016)
• Page Start: 1691
• Page End: 1697
• Publication Date: 2015-12-22
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c5nr07377d
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : Multi-floor cP(VDF-TrFE) nanostructures show that each piezoresponse can be individually changed by applying a voltage to one of the floors. Thus, the proposed device could be realized through multi-floor nanostructures. Abstract : Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to quickly accommodate an extremely large number of data bits because it is capable of storing multiple data bits in a single memory cell at once. However, all previously reported devices have failed to store a large number of data bits due to the macroscale cell size and have not allowed fast access to the stored data due to slow single data writing. Here, we introduce a novel three-dimensional multi-floor cascading polymeric ferroelectric nanostructure, successfully operating as an individual cell. In one cell, each floor has its own piezoresponse and the piezoresponse of one floor can be modulated by the bias voltage applied to the other floor, which means simultaneously written data bits in both floors can be identified. This could achieve multi-level memory through a multiple data writing process.