Cite
HARVARD Citation
Huang, W. et al. (n.d.). Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures. Materials science in semiconductor processing. pp. 1-8. [Online].
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Huang, W. et al. (n.d.). Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures. Materials science in semiconductor processing. pp. 1-8. [Online].