Photon upconversion in degenerately sulfur doped InP nanowires. Issue 48 (20th November 2015)

• Record Type: Journal Article
• Authors: Mergenthaler, K.; Lehmann, S.; Wallentin, J.; Zhang, W.; Borgström, M. T.; Yartsev, A.; Pistol, M.-E.
• Is Part Of: Nanoscale. Volume 7:Issue 48(2015)
• Page Start: 20503
• Page End: 20509
• Publication Date: 2015-11-20
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c5nr05472a
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : Radiative recombination in degenerately n-doped InP nanowires is studied for excitation above and below the Fermi energy of the electron gas, using photoluminescence. Abstract : Radiative recombination in degenerately n-doped InP nanowires is studied for excitation above and below the Fermi energy of the electron gas, using photoluminescence. Laser-induced electron heating is observed, which allows absorption below the Fermi energy. We observe photon upconversion where photo-excited holes recombine with high | k | electrons. This can be attributed to hole scattering to high | k |-values, and the temperature dependence of this process is measured. We show that hole relaxation via phonon scattering can be observed in continuous wave excitation luminescence measurements.