Superlattice-like SnSb4/Ge thin films for ultra-high speed phase change memory applications. Issue 7 (27th January 2016)

• Record Type: Journal Article
• Authors: He, Zifang; Wu, Pengzhi; Liu, Ruirui; Zhai, Jiwei; Lai, Tianshu; Song, Sannian; Song, Zhitang
• Is Part Of: CrystEngComm. Volume 18:Issue 7(2016)
• Page Start: 1230
• Page End: 1234
• Publication Date: 2016-01-27
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/c5ce02340h
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : Superlattice-like (SLL) SnSb4 /Ge thin films were studied by thermal, electrical and optical methods. Abstract : Superlattice-like (SLL) SnSb4 /Ge thin films were studied by thermal, electrical and optical methods. It was found that SnSb4 (SS) films composited with Ge in a superlattice-like configuration showed better thermal stability. With composited Ge, the temperature of 10-year data retention increased from 54 °C to 139 °C. In the electrical studies, reversible transition of a phase change memory cell based on [SS (8 nm)/Ge (4 nm)]4 could be achieved by using an electrical pulse as short as 500 ns. Moreover, ultrafast crystallization (∼6.54 ns at a energy density of ∼4.47 mJ cm −2 ) in the [SS (8 nm)/Ge (4 nm)]4 film was confirmed, which was essential to achieve rapid data recording in phase change memory.