Band modification of graphene by using slow Cs+ ions. Issue 11 (22nd January 2016)

• Record Type: Journal Article
• Authors: Sung, Sijin; Lee, Sang-Hoon; Lee, Paengro; Kim, Jingul; Park, Heemin; Ryu, Mintae; Kim, Namdong; Hwang, Choongyu; Jhi, Seung-Hoon; Chung, Jinwook
• Is Part Of: RSC advances. Volume 6:Issue 11(2016)
• Page Start: 9106
• Page End: 9111
• Publication Date: 2016-01-22
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c5ra24482j
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : We report new wide band gap engineering for graphene using slow Cs + ions, which allows both fine-tuning and on–off switching capability of the band gap in a range suitable for most applications sustaining the nature of Dirac fermions. Abstract : We report new wide band gap engineering for graphene using slow Cs + ions, which allows both fine-tuning and on–off switching capability of the band gap in a range suitable for most applications without modifying or deteriorating the relativistic nature of the Dirac fermions. The doping of Cs + ions opens the band gap up to E g = 0.68 eV, which can be closed completely by adding neutral Cs atoms, as observed in angle-resolved photoemission spectroscopy. The operating mechanism of this band gap engineering is understood by a simple capacitor model, which is fully supported by the density-functional theory calculations.