Cite
HARVARD Citation
Rossi, D. et al. (2016). A 60 GOPS/W, −1.8 V to 0.9 V body bias ULP cluster in 28 nm UTBB FD-SOI technology. Solid-state electronics. pp. 170-184. [Online].
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Rossi, D. et al. (2016). A 60 GOPS/W, −1.8 V to 0.9 V body bias ULP cluster in 28 nm UTBB FD-SOI technology. Solid-state electronics. pp. 170-184. [Online].