18.5% efficient graphene/GaAs van der Waals heterostructure solar cell. (September 2015)

• Record Type: Journal Article
• Authors: Li, Xiaoqiang; Chen, Wenchao; Zhang, Shengjiao; Wu, Zhiqian; Wang, Peng; Xu, Zhijuan; Chen, Hongsheng; Yin, Wenyan; Zhong, Huikai; Lin, Shisheng
• Is Part Of: Nano energy. Volume 16(2015:Sep.)
• Page Start: 310
• Page End: 319
• Publication Date: 2015-09
• Subjects: Graphene -- GaAs -- van der Waals Schottky diode -- Solar cell; Nanoscience -- Periodicals; Nanotechnology -- Periodicals; Nanostructured materials -- Periodicals; Power resources -- Technological innovations -- Periodicals; Nanoscience; Nanostructured materials; Nanotechnology; Power resources -- Technological innovations; Periodicals; 621.042
• DOI: 10.1016/j.nanoen.2015.07.003
• Languages: English
• ISSNs: 2211-2855

Abstract

Abstract: High efficient solar cell is highly demanded for sustainable development of human society, leading to the cutting-edge research on various types of solar cells. The physical picture of graphene/semiconductor van der Waals Schottky diode is unique as Fermi level of graphene can be tuned by gate structure relatively independent of semiconductor substrate. However, the reported gated graphene/semiconductor heterostructure has power conversion efficiency ( PCE ) normally less than 10%. Herein, utilizing a designed graphene-dielectric-graphene gating structure for graphene/GaAs heterojunction, we have achieved solar cell with PCE of 18.5% and open circuit voltage of 0.96 V. Drift-diffusion simulation results agree well with the experimental data and predict this device structure can work with a PCE above 23.8%. This research opens a door of high efficient solar cell utilizing the graphene/semiconductor heterostructure. Graphical abstract: Highlights: PCE of 18.5% has been realized for graphene/GaAs solar cells. PCE over 23.8% can be expected by further tuning the Fermi level of graphene. Fermi level tuning is promising for high efficient graphene based solar cells.