Formation and growth of stacking fault tetrahedra in Ni via vacancy aggregation mechanism. (15th March 2016)

• Record Type: Journal Article
• Authors: Aidhy, Dilpuneet S.; Lu, Chenyang; Jin, Ke; Bei, Hongbin; Zhang, Yanwen; Wang, Lumin; Weber, William J.
• Is Part Of: Scripta materialia. Volume 114(2016)
• Page Start: 137
• Page End: 141
• Publication Date: 2016-03-15
• Subjects: Molecular dynamics -- Diffusion -- Point defect -- Stacking fault tetrahedra; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2015.12.020
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: Using molecular dynamics simulations, the formation and growth of stacking fault tetrahedra (SFT) are captured by vacancy cluster diffusion and aggregation mechanisms in Ni. The vacancy-tetrahedron acts as a nucleation point for SFT formation. Simulations show that perfect SFT can grow to the next size perfect SFT via a vacancy aggregation mechanism. The stopping and range of ions in matter (SRIM) calculations and transmission electron microscopy (TEM) observations reveal that SFT can form farther away from the initial cascade-event locations, indicating the operation of diffusion-based vacancy-aggregation mechanism. Graphical abstract: