Cite
HARVARD Citation
Houssa, M. et al. (n.d.). First-principles investigation of defects at GaAs/oxide interfaces. Materials science in semiconductor processing. pp. 239-241. [Online].
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Houssa, M. et al. (n.d.). First-principles investigation of defects at GaAs/oxide interfaces. Materials science in semiconductor processing. pp. 239-241. [Online].