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Ritzenthaler, R. et al. (n.d.). Strained c:Si0.55Ge0.45 with embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applications. Materials science in semiconductor processing. pp. 255-258. [Online].
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Ritzenthaler, R. et al. (n.d.). Strained c:Si0.55Ge0.45 with embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applications. Materials science in semiconductor processing. pp. 255-258. [Online].