Critical role of silk fibroin secondary structure on the dielectric performances of organic thin-film transistors. Issue 7 (13th January 2016)
- Record Type:
- Journal Article
- Title:
- Critical role of silk fibroin secondary structure on the dielectric performances of organic thin-film transistors. Issue 7 (13th January 2016)
- Main Title:
- Critical role of silk fibroin secondary structure on the dielectric performances of organic thin-film transistors
- Authors:
- Park, Min Hong
Kim, Junhyung
Lee, Seung Chul
Cho, Se Youn
Kim, Na Rae
Kang, Boseok
Song, Eunjoo
Cho, Kilwon
Jin, Hyoung-Joon
Lee, Wi Hyoung - Abstract:
- Abstract : Correlation between silk fibroin (SF) secondary structure and dielectric performances of organic thin-film transistors (OTFTs) was investigated using various SF films. Abstract : Silk fibroin (SF) is being considered as an emerging class of dielectric material in electronics, such as organic thin-film transistors (OTFTs). SF has several advantageous properties, including high transparency, flexibility, and solution-processibility. In this study, we investigated the effects of processing solvent and post-treatment on the surface properties and structural development of SF films, which were used in the gate-dielectric of OTFTs. The SF films cast from aqueous solution exhibited an amorphous structure with random coil conformations, leading to poor dielectric properties that were inadequate for developing OTFTs. In contrast, the use of formic acid solution and sequential methanol vapor treatment after film casting induced a smoother SF surface. Moreover, its crystallinity also improved dramatically. Furthermore, the SF films cast from formic acid solution and treated with methanol vapor were capable of growth of highly ordered organic semiconductor thin films deposited on these films. As a result, pentacene TFTs fabricated with the SF films showed high performance and stable operation with nearly zero turn-on voltage, negligible hysteresis, and high bias stability. This indicates a strong correlation between the structure of the SF film and dielectric performances ofAbstract : Correlation between silk fibroin (SF) secondary structure and dielectric performances of organic thin-film transistors (OTFTs) was investigated using various SF films. Abstract : Silk fibroin (SF) is being considered as an emerging class of dielectric material in electronics, such as organic thin-film transistors (OTFTs). SF has several advantageous properties, including high transparency, flexibility, and solution-processibility. In this study, we investigated the effects of processing solvent and post-treatment on the surface properties and structural development of SF films, which were used in the gate-dielectric of OTFTs. The SF films cast from aqueous solution exhibited an amorphous structure with random coil conformations, leading to poor dielectric properties that were inadequate for developing OTFTs. In contrast, the use of formic acid solution and sequential methanol vapor treatment after film casting induced a smoother SF surface. Moreover, its crystallinity also improved dramatically. Furthermore, the SF films cast from formic acid solution and treated with methanol vapor were capable of growth of highly ordered organic semiconductor thin films deposited on these films. As a result, pentacene TFTs fabricated with the SF films showed high performance and stable operation with nearly zero turn-on voltage, negligible hysteresis, and high bias stability. This indicates a strong correlation between the structure of the SF film and dielectric performances of OTFTs. We believe that our study would be useful in designing silk materials, which are highly compatible with the human interface and other biological environments. … (more)
- Is Part Of:
- RSC advances. Volume 6:Issue 7(2016)
- Journal:
- RSC advances
- Issue:
- Volume 6:Issue 7(2016)
- Issue Display:
- Volume 6, Issue 7 (2016)
- Year:
- 2016
- Volume:
- 6
- Issue:
- 7
- Issue Sort Value:
- 2016-0006-0007-0000
- Page Start:
- 5907
- Page End:
- 5914
- Publication Date:
- 2016-01-13
- Subjects:
- Chemistry -- Periodicals
540.5 - Journal URLs:
- http://pubs.rsc.org/en/Journals/JournalIssues/RA ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/c5ra20826b ↗
- Languages:
- English
- ISSNs:
- 2046-2069
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8036.750300
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 922.xml