Preparation and Characterization of a-SiC:H Absorber Layer for Semi-transparent Solar Cells. (December 2015)

• Record Type: Journal Article
• Authors: Vygranenko, Y.; Fernandes, M.; Louro, P.; Vieira, M.; Sazonov, A.
• Is Part Of: Energy procedia. Volume 84(2015)
• Page Start: 56
• Page End: 61
• Publication Date: 2015-12
• Subjects: amorhous silicon-carbon alloy -- thin-film solar cells -- density of states.; Power resources -- Congresses; Power resources -- Periodicals; Power resources; Conference proceedings; Periodicals; 333.7905
• DOI: 10.1016/j.egypro.2015.12.295
• Languages: English
• ISSNs: 1876-6102

Abstract

Abstract: This paper reports on device-quality silicon-carbon alloy (a-SiC:H) application as an absorber material in semi-transparent solar cells. Films with an optical bandgap ranging from 2 to 2.3 eV were prepared by plasma enhanced chemical vapour deposition (PECVD). The n-i-p structures with undoped SiC:H layers deposited under the same experimental conditions were also fabricated and characterized. The optimized devices showed forward current-voltage characteristics with a diode ideality factor in the range from 1.4 to 1.8, and an open circuit voltage up to 0.92 V. The density of deep defect states in a SiC:H was estimated from the transient current measurements and correlated with the optical bandgap.