GaN nanorod array as a precursor to enhance GaN:Mn ferromagnetism. Issue 118 (13th November 2015)

• Record Type: Journal Article
• Authors: Ji, Cheng; Jiang, Shengxiang; Zhang, Yan; Xing, Haiyin; Yang, Zhijian; Wang, Cunda; Yu, Tongjun; Zhang, Guoyi
• Is Part Of: RSC advances. Volume 5:Issue 118(2015)
• Page Start: 97408
• Page End: 97412
• Publication Date: 2015-11-13
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c5ra16170c
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : A GaN nanorod was, for the first time, used as a precursor to obtain magnetically enhanced GaN:Mn film. Abstract : With a high surface-to-volume ratio, a Ga-polar GaN nanorod array was designed and obtained as a precursor for growing ferromagnetically enhanced GaN:Mn film by MOCVD. HRXRD and Raman scattering results might imply a correlation between the ferromagnetism in GaN:Mn and built-in defects in the intrinsic GaN lattice, which were produced when Mn doping was carried out.