Bifunctional AlN:Tb semiconductor with luminescence and photocatalytic properties. Issue 110 (23rd October 2015)

• Record Type: Journal Article
• Authors: Wang, Wei; Zhang, Peng; Wang, Xiaobai; Lei, Xiang; Ding, Hong; Yang, Hua
• Is Part Of: RSC advances. Volume 5:Issue 110(2015)
• Page Start: 90698
• Page End: 90704
• Publication Date: 2015-10-23
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c5ra15716a
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : AlN doped with Tb semiconductors exhibit strong green emission and excellent photocatalytic property. Abstract : Tb doped AlN semiconductors can be successfully synthesized by a facile solid state route. The as-synthesized AlN:Tb semiconductor exhibits strong green emission, showing potential utilization in solid light-emitting diodes. XRD, TEM and PL are employed to analyze the structure, morphology and photoluminescence properties of the samples. In addition, the hydrogen evolution induced by the UV-vis light of AlN:Tb is well investigated, showing an excellent photocatalytic property of 68 μmol g −1 h −1, which suggests that the AlN:Tb semiconductor is a promising material for photocatalysts for hydrogen evolution.